Elaboration Et Caractérisation De Couche Mince De Zno Par La Méthode Dip Coating

Résumé: This work involves the development and characterization of ZnO thin films by the sol-gel process using the dip-coating technique. Analyses of ZnO thin films were achieve with the technique of X-ray diffraction and Raman and UV spectroscopy; it is found that these layers crystallize in the wurtsit structure. We have demonstrated the influence of the thickness and the annealing temperature on the physical properties of thin films Thermal analysis determines that an annealing at a temperature above 400 ° C would be quite sufficient to form zinc oxide. The transmission spectra of thin films of zinc oxide show that the thin films are transparent to visible light. Temperatures (500-550 ° C), we note that the thickness of the thin film decreases with the annealing temperature and in the temperature range (400-450C °). For the interval (450-500 ° C), the thickness of the layer increases with increasing the annealing temperature, we find the temperatures 500 and 550 ° C the start of crystallization. The band gap decreases with the increase of the annealing temperature. This suggests that defects and impurities from interstitial atoms ZnO disappear when the temperature rises. The annealing causes a reorganization of the structure. The gap Eg of the decrease can also be correlated with the grain size of which increases with temperature. The values of the band gap in our ZnO thin films are between 3.398 and 3.3927 eV.

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