Comparative Numerical Simulation Between P And N-type Substrate Of Heterojunction With Intrinsic Silicon Solar Cell

Résumé: This work presents a comparative numerical simulation between p and n- type substrate of the heterojunction with intrinsic silicon solar cell. The first heterojunction with intrinsic in silicon solar cell is composed with 100 µm of silicon p-type wafer with 1,5.1016 cm-3 acceptor concentration, and the second heterojunction with intrinsic in silicon structure is composed with 100 µm of silicon n-type wafer with 1,5.1016 cm-3 donor concentration, The effective average electron and hole lifetime for the substrate p or n considered in our modeling they are equal. A high photovoltaic efficiency conversion is about 21.43% for p-type wafer and 22.8% for n-type wafer was obtained.

Publié dans la revue: Revue des sciences et sciences de l’ingénieur