Study Of Algan/gan Mos-hemts With Tio2 Gate Dielectric And Regrown Source/drain

Résumé: In This work, we propose a novel TiO2/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with 60 nm gate-length and high-k TiO2 gate dielectric. The DC and RF characteristics of the proposed AlGaN/GaN MOS-HEMT structure are analyzed by using TCAD Silvaco Software. The present TiO2/AlGaN/GaN MOS-HEMT design has shown maximum extrinsic transconductance gm of 198.3 mS/mm, saturated IDS density at VGS = 4 V of 668.4 mA/mm, maximum IDS density of 677.9 mA/mm, unity-gain cut-off frequency (ft) of 229.8 GHz, and with a record maximum oscillation frequency fmax of 627.8 GHz. The Power performance characterized at 10 GHz to give output power (Pout) of 22.3 dBm, power gain of 13.1 dB, and power-added efficiency (PAE) of 26.5%.

Publié dans la revue: Journal of New Technology and Materials