Preparation And Characterization Of Cis Thin Films Obtained By Electrodeposition Onto Ito And Mo Substrates.

Résumé: In this study, thin films of copper and indium selenide (CuInSe2) were electrochemically deposited on ITO glass substrates and Mo films. A three electrodes system is used for in-situ monitoring of the deposition process in which the working electrode voltage is kept at 0.7 V. Selenium oxide SeO2, copper chloride CuCl2 and indium InCl3 were used as precursors. The thin films produced on two different substrates for different deposition time, were characterized by different analysis techniques. The UV-Visible characterization shows a total absorption of the incident light between 190 and 1100 nm for a film thickness greater than 2 μm. On the other hand, optical microscopy and MEB illustrate good homogeneity in the texture of all surfaces of the films deposited. Spectral Raman and DRX analyzes confirm the formation of a dominant phase of CuInSe2 chalcopyrite structure characterized by a dominant peak at 1.77 cm-1.

Publié dans la revue: Journal of New Technology and Materials