Electrical Characterization Of Passivation Layers For P-type Multi Crystalline Silicon Ewt Solar Cells By Numerical Simulation

Résumé: In this study, the dielectric effects on solar cell efficiency were investigated. Different materials, such as Al2O3, HfO2, TiO2 and SiO2, were deposited by various techniques on the front side of a p-type EWT (Emitter Wrap Through) multi crystalline silicon (mc-Si) solar cell. The passivated layer thickness was optimized using the software Matlab. The recombination velocities utilized in the simulation were taken from the literature. Using the software TCAD (2D) Silvaco/Atlas, the best results (for electrical parameters) were achieved with TiO2 (refractive index n = 2.6 at λ= 620 nm) for a thickness of 5 nm; a solar cell efficiency around 20.5% was obtained

Publié dans la revue: Journal of New Technology and Materials